GaAs/AlAs trench-buried quantum wires (<20 nm × 20 nm) fabricated by metalorganic chemical vapor deposition on nonplanar substratesSOGAWA, T; ANDO, S; KANBE, H et al.Japanese journal of applied physics. 1993, Vol 32, Num 12B, pp 6224-6227, issn 0021-4922, 1Conference Paper

New linewidth measurement system using environmental scanning electron microscope technologyYAMAGUCHI, T; KAWATA, S; SUZUKI, S et al.Japanese journal of applied physics. 1993, Vol 32, Num 12B, pp 6277-6280, issn 0021-4922, 1Conference Paper

Platinum etching and plasma characteristics in RF magnetron and electron cyclotron resonance plasmasNISHIKAWA, K; KUSUMI, Y; OOMORI, T et al.Japanese journal of applied physics. 1993, Vol 32, Num 12B, pp 6102-6108, issn 0021-4922, 1Conference Paper

The transmission properties of quantum dots at high magnetic fieldsISHIBASHI, K; BIRD, J. P; STOPA, M et al.Japanese journal of applied physics. 1993, Vol 32, Num 12B, pp 6246-6250, issn 0021-4922, 1Conference Paper

Analysis of Sub-0.15 μm pattern replication in synchroton radiation lithographyKIKUCHI, Y; KONDO, K; NOMURA, H et al.Japanese journal of applied physics. 1993, Vol 32, Num 12B, pp 5960-5965, issn 0021-4922, 1Conference Paper

Fabrication of metallic structures in the 10 nm region using an inorganic electron beam resistLANGHEINRICH, W; BENEKING, H.Japanese journal of applied physics. 1993, Vol 32, Num 12B, pp 6218-6223, issn 0021-4922, 1Conference Paper

Improved registration accuracy in E-beam direct writing lithographyKOJIMA, Y; MUKAI, H; NAKAJIMA, K et al.Japanese journal of applied physics. 1993, Vol 32, Num 12B, pp 6035-6038, issn 0021-4922, 1Conference Paper

Poly(siloxane)-based chemically amplified resist convertible into silicate glassITO, T; SAKATA, M; ENDO, A et al.Japanese journal of applied physics. 1993, Vol 32, Num 12B, pp 6052-6058, issn 0021-4922, 1Conference Paper

Research on information processing by neural networks cultured on substratesWILKINSON, C. D. W.Japanese journal of applied physics. 1993, Vol 32, Num 12B, pp 6210-6212, issn 0021-4922, 1Conference Paper

Electrical properties of silicon nitride films prepared by photo-assisted chemical vapor deposition under controlled decomposition of ammoniaYOSHIMOTO, M; OHTSUKI, T; TAKUBO, K et al.Japanese journal of applied physics. 1993, Vol 32, Num 12B, pp 6132-6136, issn 0021-4922, 1Conference Paper

Plasma-induced damage behavior in GaAs by photoreflectance spectroscopyNAKANISHI, H; WADA, K.Japanese journal of applied physics. 1993, Vol 32, Num 12B, pp 6206-6209, issn 0021-4922, 1Conference Paper

Sub-half-micron periodic structures on polymer surfaces with polarized laser irradiationSENDOVA, M; HIRAOKA, H.Japanese journal of applied physics. 1993, Vol 32, Num 12B, pp 6182-6184, issn 0021-4922, 1Conference Paper

The anisotropic plasma-enhanced chemical vapor deposition SiO₂/spin-on glass process for 0.35 μm technologyLAI-JUH CHEN; SHAW-TZENG HSIA; KUANG-CHAO CHEN et al.Japanese journal of applied physics. 1993, Vol 32, Num 12B, pp 6119-6121, issn 0021-4922, 1Conference Paper

Correlation of nano edge roughness in resist patterns with base polymersYOSHIMURA, T; SHIRAISHI, H; YAMAMOTO, J et al.Japanese journal of applied physics. 1993, Vol 32, Num 12B, pp 6065-6070, issn 0021-4922, 1Conference Paper

Diagonal phase errors affecting optical intensity in phase defect repair elementsOHTSUKU, H; KUWAHARA, K; ONODERA, T et al.Japanese journal of applied physics. 1993, Vol 32, Num 12B, pp 5892-5899, issn 0021-4922, 1Conference Paper

Electron beam column developments for submicron- and nanolithographyGESLEY, M; ABBOUD, F; COLBY, D et al.Japanese journal of applied physics. 1993, Vol 32, Num 12B, pp 5993-6005, issn 0021-4922, 1Conference Paper

Hole pattern fabrication using halftone phase-shifting masks in KrF lithographyOTAKA, A; KAWAI, Y; MATSUDA, T et al.Japanese journal of applied physics. 1993, Vol 32, Num 12B, pp 5880-5886, issn 0021-4922, 1Conference Paper

Monolayer halftone phase-shifting mask for KrF excimer laser lithographyIWABUCHI, Y; USHIODA, J; TANABE, H et al.Japanese journal of applied physics. 1993, Vol 32, Num 12B, pp 5900-5902, issn 0021-4922, 1Conference Paper

Resolution limit for optical lithography using polarized light illuminationASAI, S; HANYU, I; TAKIKAWA, M et al.Japanese journal of applied physics. 1993, Vol 32, Num 12B, pp 5863-5866, issn 0021-4922, 1Conference Paper

Stitching error analysis in an electron beam lithography system : column vibration effectOHTA, H; MATSUZAKA, T; SAITOU, N et al.Japanese journal of applied physics. 1993, Vol 32, Num 12B, pp 6044-6048, issn 0021-4922, 1Conference Paper

Study on X-ray mask distortion applying direct bonding to frame mountingMTISUI, S; ITOH, M; MOEL, A et al.Japanese journal of applied physics. 1993, Vol 32, Num 12B, pp 5924-5927, issn 0021-4922, 1Conference Paper

Wedge-shaped silicon emitter fabricated by new methodHASHIGUCHI, G; SAKAMOTO, H; KANAZAWA, S et al.Japanese journal of applied physics. 1993, Vol 32, Num 12B, pp 6291-6292, issn 0021-4922, 1Conference Paper

Effects of electron irradiation on two-dimensional electron gas in AlGaAs/GaAs heterostructureWADA, T; KANAYAMA, T; ICHIMURA, S et al.Japanese journal of applied physics. 1993, Vol 32, Num 12B, pp 6262-6267, issn 0021-4922, 1Conference Paper

Estimation of damage induced by focused Ga ion beam irradiationYAMAMOTO, T; YANAGISAWA, J; GAMO, K et al.Japanese journal of applied physics. 1993, Vol 32, Num 12B, pp 6268-6273, issn 0021-4922, 1Conference Paper

Etch rate acceleration of SiO₂ during wet treatment after gate etchingTATSUMI, T; FUKUDA, S; KADOMURA, S et al.Japanese journal of applied physics. 1993, Vol 32, Num 12B, pp 6114-6118, issn 0021-4922, 1Conference Paper